| PART |
Description |
Maker |
| HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| HN1C01FE HN1C01FE-Y |
150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2SC4210 E000916 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4738F |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC311303 2SC3113 |
Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications
|
Toshiba Semiconductor
|
| HN1B01FU E001968 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC4738 E000984 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC4116 E000906 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC3421 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| HN1B01F07 |
Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC3324 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications
|
TOSHIBA
|
